vishay 1N4148W document number 85748 rev. 3, 22-may-03 vishay semiconductors www.vishay.com 1 17431 small-signal diode features ? these diodes are also available in other case styles including the do-35 case with the type des- ignation 1n4148, the minimelf case with the type designation ll4148, and the sot-23 case with the type designation imbd4148. silicon epitaxial planar diode fast switching diodes mechanical data case: sod-123 plastic case weight: approx. 10 mg marking: a2 packaging codes/options: d3 / 10k per 13" reel (8 mm tape), 30k/box d4 / 3k per 7" reel (8 mm tape), 30k/box absolute maximum ratings t amb = 25 c, unless otherwise specified 1) valid provided that electrodes are kept at ambient temperature. maximum thermal resistance t amb = 25 c, unless otherwise specified 1) valid provided that electrodes are kept at ambient temperature. parameter te s t c o n d i t i o n symbol va lu e unit reverse voltage v r 75 v peak reverse voltage v rm 100 v average rectified current half wave rectification with resistive load f 50 hz i f(av) 150 1) ma surge forward current t < 1 s and t j = 25 c i fsm 500 ma power dissipation p tot 400 1) mw parameter test condition symbol value unit thermal resistance junction to ambient air r ja 450 1) c/w junction temperature t j 150 c storage temperature t s - 65 to + 150 c
www.vishay.com 2 document number 85748 rev. 3, 22-may-03 vishay 1N4148W vishay semiconductors electrical characteristics t amb = 25 c, unless otherwise specified rectification efficiency measurement circuit typical characteristics (t amb = 25 c unless otherwise specified) parameter test condition symbol min typ. max unit forward voltage i f = 10 ma v f 1.0 v leakage current v r = 20 v 25 na v r = 75 v 5.0 a v r = 20 v, t j = 150 c 50 a capacitance v f = v r = 0 v c tot 4 pf voltage rise when switching on (tested with 50 ma pulses) tested with 50 ma pulses, t p = 0.1 s, rise time < 30 ns, f p = (5 to 100) khz v fr 2.5 ns reverse recovery time i f = 10 ma, i r = 1 ma, v r = 6 v, r l = 100 ? t rr 4 ns rectification efficiency f = 100 mhz, v rf = 2 v 0.45 17436 figure 1. forward characteristics 17437 figure 2. dynamic forward resistance vs. forward current 17438
vishay 1N4148W document number 85748 rev. 3, 22-may-03 vishay semiconductors www.vishay.com 3 figure 3. admissible power dissipation vs. ambient temperature figure 4. reverse capacitance vs. reverse voltage 17439 17440 figure 5. leakage current vs. junction temperature 17441 17442 figure 6. admissible repetitive peak forward current vs. pulse duration
www.vishay.com 4 document number 85748 rev. 3, 22-may-03 vishay 1N4148W vishay semiconductors package dimensions in inches (mm) mounting pad layout .022 (0.55) .112 (2.85) .152 (3.85) .067 (1.70) .053 (1.35) max. .010 (0.25) min. cathode band .006 (0.15) max. .140 (3.55) .100 (2.55) .055 (1.40) .004 (0.1) max. 17432 0.94(2.40) 17430 0.055(1.40) 0.055(1.40)
vishay 1N4148W document number 85748 rev. 3, 22-may-03 vishay semiconductors www.vishay.com 5 ozone depleting substances policy statement it is the policy of vishay semiconductor gmbh to 1. meet all present and future national and international statutory requirements. 2. regularly and continuously improve the performance of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. it is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (odss). the montreal protocol (1987) and its london amendments (1990) intend to severely restrict the use of odss and forbid their use within the next ten years. various national and international initiatives are pressing for an earlier ban on these substances. vishay semiconductor gmbh has been able to use its policy of continuous improvements to eliminate the use of odss listed in the following documents. 1. annex a, b and list of transitional substances of the montreal protocol and the london amendments respectively 2. class i and ii ozone depleting substances in the clean air act amendments of 1990 by the environmental protection agency (epa) in the usa 3. council decision 88/540/eec and 91/690/eec annex a, b and c (transitional substances) respectively. vishay semiconductor gmbh can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. we reserve the right to make changes to improve technical design and may do so without further notice. parameters can vary in different applications. all operating parameters must be validated for each customer application by the customer. should the buyer use vishay semiconductors products for any unintended or unauthorized application, the buyer shall indemnify vishay semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. vishay semiconductor gmbh, p.o.b. 3535, d-74025 heilbronn, germany telephone: 49 (0)7131 67 2831, fax number: 49 (0)7131 67 2423
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